Abstract
The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.
Original language | English |
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Pages (from-to) | 1748-1750 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2004 Aug 1 |
Bibliographical note
Funding Information:This work was supported by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs.
ASJC Scopus subject areas
- General Physics and Astronomy