Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

Wanjun Park; I. J. Hwang; Taewan Kim; K. J. Lee; Young Keun Kim

doi:10.1063/1.1765852

Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

Wanjun Park, I. J. Hwang, Taewan Kim, K. J. Lee, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

Original language	English
Pages (from-to)	1748-1750
Number of pages	3
Journal	Journal of Applied Physics
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.1765852
Publication status	Published - 2004 Aug 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning",

abstract = "The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.",

author = "Wanjun Park and Hwang, {I. J.} and Taewan Kim and Lee, {K. J.} and Kim, {Young Keun}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Park, Wanjun

AU - Hwang, I. J.

AU - Kim, Taewan

AU - Lee, K. J.

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21st century Frontier Programs. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

AB - The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

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Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

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