Anti-parallel spin interaction between the carriers in coupled quantum dots

  • S. Lee*
  • , J. K. Furdyna
  • , M. Dobrowolska
  • *Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    We have performed magneto-photoluminescence (PL) experiments on a self-assembled coupled double quantum dot (QD) system consisting of adjacent CdSe and CdZnSe QD layers. We have observed well separated two PL peaks in such a double layer QD system, corresponding to the CdSe and the CdZnSe QDs. The excitation power dependence of relative PL intensity of the two QD structures clearly shows characteristics of coupled system. This system also exhibits significantly different degree of polarization between CdSe and CdZnSe QD when a magnetic field applied, in contrast to the behavior shown by single-layer CdSe or CdZnSe QD systems, which show nearly identical polarization dependence on the field. The observed behavior was interpreted in terms anti-parallel spin interaction between carriers localized in pairs of QDs that are electronically coupled.

    Original languageEnglish
    Pages (from-to)447-450
    Number of pages4
    JournalInstitute of Physics Conference Series
    Volume184
    Publication statusPublished - 2005
    Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
    Duration: 2004 Sept 122004 Dec 16

    ASJC Scopus subject areas

    • General Physics and Astronomy

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