TY - JOUR
T1 - Anti-reflection porous SiO2 thin film deposited using reactive high-power impulse magnetron sputtering at high working pressure for use in a-Si:H solar cells
AU - Kim, Kyeonghun
AU - Kim, Sungmin
AU - An, Sehoon
AU - Lee, Geun Hyuk
AU - Kim, Donghwan
AU - Han, Seunghee
N1 - Funding Information:
This study was supported by the “ Development of inorganic thin-film solar cells based on flexible electrodes (Grant No. 2E24821 )” program of the Korea Institute of Science and Technology , and the “Development of fundamental technologies for converting solar energy to clean energy (Grant No. 2N38610 )” program of the Korea Institute of Science and Technology.
PY - 2014/11
Y1 - 2014/11
N2 - Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO2 thin films was 94.45%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.
AB - Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO2 thin films was 94.45%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.
KW - Anti-reflection coating
KW - High power impulse magnetron sputtering (HIPIMS)
KW - High working pressure
KW - Hydrogenated amorphous silicon solar cell
KW - Porous structure
UR - http://www.scopus.com/inward/record.url?scp=84907203314&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2014.08.002
DO - 10.1016/j.solmat.2014.08.002
M3 - Article
AN - SCOPUS:84907203314
SN - 0927-0248
VL - 130
SP - 582
EP - 586
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -
