Anti-reflection porous SiO2 thin film deposited using reactive high-power impulse magnetron sputtering at high working pressure for use in a-Si:H solar cells

Kyeonghun Kim; Sungmin Kim; Sehoon An; Geun Hyuk Lee; Donghwan Kim; Seunghee Han

doi:10.1016/j.solmat.2014.08.002

Anti-reflection porous SiO₂ thin film deposited using reactive high-power impulse magnetron sputtering at high working pressure for use in a-Si:H solar cells

Kyeonghun Kim
, Sungmin Kim
, Sehoon An
, Geun Hyuk Lee
, Donghwan Kim
, Seunghee Han^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Porous SiO₂ thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO₂ thin films was 94.45%. In comparison, SiO₂ thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO₂ thin films. To examine the effect of the anti-reflection SiO₂ coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO₂-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (J_sc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.

Original language	English
Pages (from-to)	582-586
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	130
DOIs	https://doi.org/10.1016/j.solmat.2014.08.002
Publication status	Published - 2014 Nov

Bibliographical note

Funding Information:
This study was supported by the “ Development of inorganic thin-film solar cells based on flexible electrodes (Grant No. 2E24821 )” program of the Korea Institute of Science and Technology , and the “Development of fundamental technologies for converting solar energy to clean energy (Grant No. 2N38610 )” program of the Korea Institute of Science and Technology.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Anti-reflection coating
High power impulse magnetron sputtering (HIPIMS)
High working pressure
Hydrogenated amorphous silicon solar cell
Porous structure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2014.08.002

Cite this

@article{187c0a9025b2474f8ab4135364b037df,

title = "Anti-reflection porous SiO2 thin film deposited using reactive high-power impulse magnetron sputtering at high working pressure for use in a-Si:H solar cells",

abstract = "Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO2 thin films was 94.45\%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26\%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75\%, higher than the 10.75\% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.",

keywords = "Anti-reflection coating, High power impulse magnetron sputtering (HIPIMS), High working pressure, Hydrogenated amorphous silicon solar cell, Porous structure",

author = "Kyeonghun Kim and Sungmin Kim and Sehoon An and Lee, \{Geun Hyuk\} and Donghwan Kim and Seunghee Han",

note = "Funding Information: This study was supported by the {\textquotedblleft} Development of inorganic thin-film solar cells based on flexible electrodes (Grant No. 2E24821 ){\textquotedblright} program of the Korea Institute of Science and Technology , and the {\textquotedblleft}Development of fundamental technologies for converting solar energy to clean energy (Grant No. 2N38610 ){\textquotedblright} program of the Korea Institute of Science and Technology.",

year = "2014",

month = nov,

doi = "10.1016/j.solmat.2014.08.002",

language = "English",

volume = "130",

pages = "582--586",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier BV",

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T1 - Anti-reflection porous SiO2 thin film deposited using reactive high-power impulse magnetron sputtering at high working pressure for use in a-Si:H solar cells

AU - Kim, Kyeonghun

AU - Kim, Sungmin

AU - An, Sehoon

AU - Lee, Geun Hyuk

AU - Kim, Donghwan

AU - Han, Seunghee

N1 - Funding Information: This study was supported by the “ Development of inorganic thin-film solar cells based on flexible electrodes (Grant No. 2E24821 )” program of the Korea Institute of Science and Technology , and the “Development of fundamental technologies for converting solar energy to clean energy (Grant No. 2N38610 )” program of the Korea Institute of Science and Technology.

PY - 2014/11

Y1 - 2014/11

N2 - Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO2 thin films was 94.45%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.

AB - Porous SiO2 thin films with low reflectance and high transmittance were obtained using reactive high power impulse magnetron sputtering (HIPIMS) at a high working pressure of 6.67 Pa (50 mTorr). The average transmittance (450-600 nm) of the SiO2 thin films was 94.45%. In comparison, SiO2 thin films deposited at a low working pressure of 0.27 Pa (2 mTorr) showed an average transmittance of 91.26%. The improvement in the transmittance was attributed to the lower refractive index resulting from the porous structure of the SiO2 thin films. To examine the effect of the anti-reflection SiO2 coating, an a-Si:H solar cell was produced on fluorine-doped tin oxide (FTO) glass. The initial energy conversion efficiency for cells using the anti-reflection, SiO2-coated FTO glass was 11.75%, higher than the 10.75% for the sample using the bare FTO glass. The increase in the short-circuit current density (Jsc) due to the decreased light reflectance was the largest contributor to the increase in the a-Si:H solar cell efficiency.

KW - Anti-reflection coating

KW - High power impulse magnetron sputtering (HIPIMS)

KW - High working pressure

KW - Hydrogenated amorphous silicon solar cell

KW - Porous structure

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