TY - GEN
T1 - Applications of TMR devices in solid state circuits and systems
AU - Chen, Yiran
AU - Li, Hai
AU - Wang, Xiaobin
AU - Park, Jongsun
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology.
AB - Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology.
KW - Magnetic memory, memristor
KW - Magnetic tunneling junction
KW - Spin-transfer torque
KW - Spintronic memory
UR - http://www.scopus.com/inward/record.url?scp=79851482153&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79851482153&partnerID=8YFLogxK
U2 - 10.1109/SOCDC.2010.5682923
DO - 10.1109/SOCDC.2010.5682923
M3 - Conference contribution
AN - SCOPUS:79851482153
SN - 9781424486335
T3 - 2010 International SoC Design Conference, ISOCC 2010
SP - 252
EP - 255
BT - 2010 International SoC Design Conference, ISOCC 2010
T2 - 2010 International SoC Design Conference, ISOCC 2010
Y2 - 22 November 2010 through 23 November 2010
ER -