Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park; Chang Hyun Bae; Woosung Nam; Sung Chan Park; Jeong Sook Ha

doi:10.1063/1.1848196

Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park^*
, Chang Hyun Bae
, Woosung Nam
, Sung Chan Park
, Jeong Sook Ha

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

Original language	English
Article number	023104
Pages (from-to)	023104-1-023104-3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1848196
Publication status	Published - 2005 Jan 10

Bibliographical note

Funding Information:
This work was supported by the National R & D Project for Nano Science and Technology (Grant No. M10213120001-02B1512-00310) and the Basic Research Program of Korea Science and Engineering Foundation (Grant No. R01-2003-000-10019-0).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1848196

Cite this

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title = "Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition",

abstract = "Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.",

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AU - Park, Seung Min

AU - Bae, Chang Hyun

AU - Nam, Woosung

AU - Park, Sung Chan

AU - Ha, Jeong Sook

N1 - Funding Information: This work was supported by the National R & D Project for Nano Science and Technology (Grant No. M10213120001-02B1512-00310) and the Basic Research Program of Korea Science and Engineering Foundation (Grant No. R01-2003-000-10019-0).

PY - 2005/1/10

Y1 - 2005/1/10

N2 - Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

AB - Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

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Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Abstract

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