Artificial array of InAs quantum dots on a strain-engineered superlattice

K. M. Kim, Y. J. Park, S. H. Son, S. H. Lee, J. I. Lee, J. H. Park, S. K. Park

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

Original languageEnglish
Pages (from-to)148-152
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume24
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Aug
EventProceedings of the Intenational Symposium on Functional - Atsugi/Kanagawa, Japan
Duration: 2003 Nov 122003 Nov 14

Bibliographical note

Funding Information:
The Authors would like to thank Prof. J.Y. Lee and Dr. H.S. Lee of KAIST for the TEM measurement. This work was supported by the Nanostructure Technology Project, and by the Nano R&D program of MOST.

Keywords

  • Alignment
  • Quantum-dot array
  • Single-electron devices
  • Strain-engineering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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