Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.
|Number of pages
|Physica E: Low-Dimensional Systems and Nanostructures
|1-2 SPEC. ISS.
|Published - 2004 Aug
|Proceedings of the Intenational Symposium on Functional - Atsugi/Kanagawa, Japan
Duration: 2003 Nov 12 → 2003 Nov 14
Bibliographical noteFunding Information:
The Authors would like to thank Prof. J.Y. Lee and Dr. H.S. Lee of KAIST for the TEM measurement. This work was supported by the Nanostructure Technology Project, and by the Nano R&D program of MOST.
- Quantum-dot array
- Single-electron devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics