Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx)NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers

In Su Kim; Jong Un Woo; Hyun Gyu Hwang; Bumjoo Kim; Sahn Nahm

doi:10.1016/j.jmst.2022.02.021

Artificial synaptic and self-rectifying properties of crystalline (Na_1-_xK_x)NbO₃ thin films grown on Sr₂Nb₃O₁₀ nanosheet seed layers

In Su Kim, Jong Un Woo, Hyun Gyu Hwang, Bumjoo Kim, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Crystalline (Na_1-_xK_x)NbO₃ (NKN) thin films were deposited on Sr₂Nb₃O₁₀/TiN/Si (S-TS) substrates at 370 °C. Sr₂Nb₃O₁₀ (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

Original language	English
Pages (from-to)	136-143
Number of pages	8
Journal	Journal of Materials Science and Technology
Volume	123
DOIs	https://doi.org/10.1016/j.jmst.2022.02.021
Publication status	Published - 2022 Oct 1

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063 ). We thank the KU-KIST Graduate School Program of the Korea University .

Publisher Copyright:
© 2022

Keywords

Artificial synaptic properties
Bipolar switching properties
Crystalline NKN thin film
Self-rectifying bipolar switching properties
SrNbO nanosheet seed layer

ASJC Scopus subject areas

Ceramics and Composites
Mechanics of Materials
Mechanical Engineering
Polymers and Plastics
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jmst.2022.02.021

Cite this

@article{0855b8c5766a42698d5d5fa84b68c556,

title = "Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx)NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers",

abstract = "Crystalline (Na1-xKx)NbO3 (NKN) thin films were deposited on Sr2Nb3O10/TiN/Si (S-TS) substrates at 370 °C. Sr2Nb3O10 (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.",

keywords = "Artificial synaptic properties, Bipolar switching properties, Crystalline NKN thin film, Self-rectifying bipolar switching properties, SrNbO nanosheet seed layer",

author = "Kim, {In Su} and Woo, {Jong Un} and Hwang, {Hyun Gyu} and Bumjoo Kim and Sahn Nahm",

note = "Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063 ). We thank the KU-KIST Graduate School Program of the Korea University . Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = oct,

day = "1",

doi = "10.1016/j.jmst.2022.02.021",

language = "English",

volume = "123",

pages = "136--143",

journal = "Journal of Materials Science and Technology",

issn = "1005-0302",

publisher = "Chinese Society of Metals",

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TY - JOUR

T1 - Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx)NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers

AU - Kim, In Su

AU - Woo, Jong Un

AU - Hwang, Hyun Gyu

AU - Kim, Bumjoo

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063 ). We thank the KU-KIST Graduate School Program of the Korea University . Publisher Copyright: © 2022

PY - 2022/10/1

Y1 - 2022/10/1

N2 - Crystalline (Na1-xKx)NbO3 (NKN) thin films were deposited on Sr2Nb3O10/TiN/Si (S-TS) substrates at 370 °C. Sr2Nb3O10 (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

AB - Crystalline (Na1-xKx)NbO3 (NKN) thin films were deposited on Sr2Nb3O10/TiN/Si (S-TS) substrates at 370 °C. Sr2Nb3O10 (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

KW - Artificial synaptic properties

KW - Bipolar switching properties

KW - Crystalline NKN thin film

KW - Self-rectifying bipolar switching properties

KW - SrNbO nanosheet seed layer

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DO - 10.1016/j.jmst.2022.02.021

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JF - Journal of Materials Science and Technology

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