Assessment of the (010) β-Ga2O3surface and substrate specification

Michael A. Mastro; Charles R. Eddy; Marko J. Tadjer; Jennifer K. Hite; Jihyun Kim; Stephen J. Pearton

doi:10.1116/6.0000725

Assessment of the (010) β-Ga₂O₃surface and substrate specification

Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, Stephen J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga2O3) have led to the commercialization of large-area β-Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of β-Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.

Original language	English
Article number	013408
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	39
Issue number	1
DOIs	https://doi.org/10.1116/6.0000725
Publication status	Published - 2021 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/6.0000725

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title = "Assessment of the (010) β-Ga2O3surface and substrate specification",

abstract = "Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga2O3) have led to the commercialization of large-area β-Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of β-Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.",

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note = "Funding Information: The work at NRL was partially supported by DTRA (Grant No. HDTRA1-17-1-0011) (Jacob Calkins, monitor) and the Office of Naval Research. The work at UF is partially supported by Grant No. HDTRA1-17-1-0011. The project or effort depicted is partially sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (No. 20172010104830) and the National Research Foundation of Korea (No. 2020M3H4A3081799). The authors thank the anonymous reviewers for the beneficial information and analysis. Publisher Copyright: {\textcopyright} 2020 Author(s).",

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AU - Pearton, Stephen J.

N1 - Funding Information: The work at NRL was partially supported by DTRA (Grant No. HDTRA1-17-1-0011) (Jacob Calkins, monitor) and the Office of Naval Research. The work at UF is partially supported by Grant No. HDTRA1-17-1-0011. The project or effort depicted is partially sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (No. 20172010104830) and the National Research Foundation of Korea (No. 2020M3H4A3081799). The authors thank the anonymous reviewers for the beneficial information and analysis. Publisher Copyright: © 2020 Author(s).

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Assessment of the (010) β-Ga₂O₃surface and substrate specification

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