Asymmetry in the planar Hall resistance of Fe films grown on vicinal GaAs substrates

Taehee Yoo, S. Khym, Hakjoon Lee, Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We have investigated the Hall effects of the ferromagnetic Fe films grown on standard (001) and on vicinal (i.e., slightly tilted toward the [1 1- 0] direction) GaAs substrates at room temperature. While the symmetric hysteresis in the planar Hall resistance (PHR) is obtained from Fe film grown nominal (001) substrate, a significant asymmetry appeared in the Fe films grown on vicinal GaAs substrates. The asymmetry in the hysteresis of the PHR observed in the Fe film grown on vicinal surface originates from the switching of magnetization M between two easy axes while it is confined to the (001) crystal plane rather than to the film plane, thus involves both the planar Hall effect (PHE) and the anomalous Hall effect (AHE). The contribution of the AHE systematically increases as the tilted angle of the substrate increases. The asymmetric hysteresis of the PHR in the Fe films grown on the tilted substrate provides four distinct resistance states, which can be used for quaternary memory devices.

Original languageEnglish
Article number09C505
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2010 May 1

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. 10543), and by the National Science Foundation Grant No. DMR06-03762.

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Asymmetry in the planar Hall resistance of Fe films grown on vicinal GaAs substrates'. Together they form a unique fingerprint.

Cite this