The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the  directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2010 May 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)