Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers

Yungjun Kim; Sunjae Chung; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3352977

Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga_1-x Mn_x A_s epilayers

Yungjun Kim, Sunjae Chung, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The magnetization reversal processes of ferromagnetic Ga _1-xMn_x A_s films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga_1-xMn_x A_s film.

Original language	English
Article number	09C304
Journal	Journal of Applied Physics
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.3352977
Publication status	Published - 2010 May 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{1c0d3dbae7214fde84f1f1e644065708,

title = "Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers",

abstract = "The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.",

author = "Yungjun Kim and Sunjae Chung and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Contract No. 2009-0071795); by the Seoul R&DB Program (Contract No. ST090777); and by the National Science Foundation (Grant No. DMR06-03762).",

year = "2010",

month = may,

day = "1",

doi = "10.1063/1.3352977",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers

AU - Kim, Yungjun

AU - Chung, Sunjae

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Contract No. 2009-0071795); by the Seoul R&DB Program (Contract No. ST090777); and by the National Science Foundation (Grant No. DMR06-03762).

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

AB - The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

UR - http://www.scopus.com/inward/record.url?scp=77951698262&partnerID=8YFLogxK

U2 - 10.1063/1.3352977

DO - 10.1063/1.3352977

M3 - Article

AN - SCOPUS:77951698262

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 09C304

ER -

Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga_1-x Mn_x A_s epilayers

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