Abstract
Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.
Original language | English |
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Pages (from-to) | 53-58 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 490 |
Publication status | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 1997 Dec 2 → 1997 Dec 4 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering