Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

Kwang Ki Choi; Tae Yeon Seong; Seonghoon Lee; Hyunsang Hwang; Yong Sun Sohn

Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

Kwang Ki Choi^*
, Tae Yeon Seong
, Seonghoon Lee
, Hyunsang Hwang
, Yong Sun Sohn

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×10¹⁷/cm³. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Original language	English
Pages (from-to)	53-58
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	490
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: 1997 Dec 2 → 1997 Dec 4

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{f5237d190ad24639af84654f9b60d905,

title = "Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching",

abstract = "Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.",

author = "Choi, \{Kwang Ki\} and Seong, \{Tae Yeon\} and Seonghoon Lee and Hyunsang Hwang and Sohn, \{Yong Sun\}",

year = "1998",

language = "English",

volume = "490",

pages = "53--58",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 02-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

AU - Choi, Kwang Ki

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

AU - Hwang, Hyunsang

AU - Sohn, Yong Sun

PY - 1998

Y1 - 1998

N2 - Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

AB - Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

UR - https://www.scopus.com/pages/publications/0032292707

M3 - Conference article

AN - SCOPUS:0032292707

SN - 0272-9172

VL - 490

SP - 53

EP - 58

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 2 December 1997 through 4 December 1997

ER -

Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

Abstract

ASJC Scopus subject areas

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