Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD

Dongsup Lim, Dongjin Byun, Gyeungho Kim, Ok Hyun Nam, In Hoon Choi, Dalkeun Park, Dong Wha Kum

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)

    Abstract

    Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of the buffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550 °C.

    Original languageEnglish
    Pages (from-to)451-456
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Volume423
    DOIs
    Publication statusPublished - 1996
    EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
    Duration: 1996 Apr 81996 Apr 12

    ASJC Scopus subject areas

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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