Abstract
Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of the buffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 451-456 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 423 |
| DOIs | |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering