Atomic-layer-deposited Al₂O₃ thin films with thin SiO₂ layers grown by in situ O₃ oxidation

Thin Al₂O₃ films with a series of thickness were grown on HF-cleaned bare Si, as well as various Si wafers, by rapid thermal oxidation. The high oxidation potential of O₃ oxidized the Si surface at a very early stage of film growth and eliminated the incubation period even on a bare Si surface. The Al₂ films grown on a bare Si substrate have the highest concentration of excess oxygen, which resulted in the largest increase in the interfacial layer thickness during postannealing. The Al ₂O₃ layers show a real high-k gate dielectric performance.