TY - GEN
T1 - Atomic layer deposition of Ru thin films using 2,4-(dimethylpentadienyl) (ethylcyclopentadienyl)Ru by a liquid injection system
AU - Kim, Seong Keun
AU - Lee, Sang Young
AU - Lee, Sang Woon
AU - Hwang, Cheol Seong
PY - 2007
Y1 - 2007
N2 - Ru thin films were grown on TiO2/Si and bare-Si substrates by atomic-layer-deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O2 as Ru precursor and reactant, respectively. Negligible RuO2 was formed even with an excessive oxygen dose. Ru films on TiO2/Si substrate showed smoother surface morphology compared to Ru films on bare-Si substrate. Although abnormal grain growth of Ru films appeared at annealing temperature > 700 °C, agglomeration of Ru films was not observed. Al-incorporated TiO2 (ATO) films were grown on Ru films and the electrical properties of the capacitor were investigated in order to evaluate the properties of bottom Ru films. The leakage current density of an ATO film with an equivalent oxide thickness of 0.7 nm was 10-7 A/cm2 at + 1V. Therefore, Ru films grown by ALD are very promising as the capacitor electrodes of future dynamic random access memories.
AB - Ru thin films were grown on TiO2/Si and bare-Si substrates by atomic-layer-deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and O2 as Ru precursor and reactant, respectively. Negligible RuO2 was formed even with an excessive oxygen dose. Ru films on TiO2/Si substrate showed smoother surface morphology compared to Ru films on bare-Si substrate. Although abnormal grain growth of Ru films appeared at annealing temperature > 700 °C, agglomeration of Ru films was not observed. Al-incorporated TiO2 (ATO) films were grown on Ru films and the electrical properties of the capacitor were investigated in order to evaluate the properties of bottom Ru films. The leakage current density of an ATO film with an equivalent oxide thickness of 0.7 nm was 10-7 A/cm2 at + 1V. Therefore, Ru films grown by ALD are very promising as the capacitor electrodes of future dynamic random access memories.
UR - https://www.scopus.com/pages/publications/51349097025
U2 - 10.1109/ISAF.2007.4393201
DO - 10.1109/ISAF.2007.4393201
M3 - Conference contribution
AN - SCOPUS:51349097025
SN - 1424413338
SN - 9781424413331
T3 - IEEE International Symposium on Applications of Ferroelectrics
SP - 163
EP - 166
BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Y2 - 27 May 2007 through 31 May 2007
ER -