TY - GEN
T1 - Atomic layer deposition of ruthenium in various precursors and oxygen doses
AU - Kim, Jun Woo
AU - Son, Kyung Sik
AU - Kim, Byungwoo
AU - Kim, Woong
AU - Shim, Joon Hyung
PY - 2012
Y1 - 2012
N2 - Atomic layer deposition (ALD) of Ru films under various precursor and oxidant supply conditions was carried out at 320°C on silicon wafers. The Ru precursor used was bis(ethylcyclopentadienyl) ruthenium [Ru(EtCp)2], and oxygen gas was used as the oxidant. The Ru precursor pulse time, oxygen pulse time, and oxygen flow rate were varied, and the effects of these parameters on the morphology of the deposited films were analyzed using scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The films showed hollow shell-like bumps, indicating that film growth began with a reaction in the gas phase or in physically adsorbed states. A mismatch between the thermal expansion coefficients of Si and Ru or the existence of residues on the wafer surfaces was suspected to be responsible for the hollow shell-like structures. However, the results of energy-dispersive X-ray spectroscopy (EDS) proved that the latter was not the case.
AB - Atomic layer deposition (ALD) of Ru films under various precursor and oxidant supply conditions was carried out at 320°C on silicon wafers. The Ru precursor used was bis(ethylcyclopentadienyl) ruthenium [Ru(EtCp)2], and oxygen gas was used as the oxidant. The Ru precursor pulse time, oxygen pulse time, and oxygen flow rate were varied, and the effects of these parameters on the morphology of the deposited films were analyzed using scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The films showed hollow shell-like bumps, indicating that film growth began with a reaction in the gas phase or in physically adsorbed states. A mismatch between the thermal expansion coefficients of Si and Ru or the existence of residues on the wafer surfaces was suspected to be responsible for the hollow shell-like structures. However, the results of energy-dispersive X-ray spectroscopy (EDS) proved that the latter was not the case.
UR - http://www.scopus.com/inward/record.url?scp=84885791175&partnerID=8YFLogxK
U2 - 10.1149/05013.0165ecst
DO - 10.1149/05013.0165ecst
M3 - Conference contribution
AN - SCOPUS:84885791175
SN - 9781623320126
T3 - ECS Transactions
SP - 165
EP - 171
BT - Atomic Layer Deposition Applications 8
PB - Electrochemical Society Inc.
T2 - Symposium on Atomic Layer Deposition Applications 8 - 222nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -