Atomic layer deposition of ruthenium in various precursors and oxygen doses

Keyphrases

• Atomic Layer Deposition 100%
• Ruthenium 100%
• Pulse Time 100%
• Oxygen Dose 100%
• Hollow Shell 100%
• Gas Phase 50%
• Energy Dispersive X-ray Spectroscopy 50%
• Oxygen Gas 50%
• Silicon Wafer 50%
• X-ray Diffraction (XRD) Analysis 50%
• Time Flow 50%
• Scanning Electron Microscope 50%
• Bump 50%
• Film Growth 50%
• Wafer Surface 50%
• Coefficient of Thermal Expansion 50%
• Adsorbed State 50%
• Supply Conditions 50%
• Shell-like Structures 50%
• Oxygen Pulse 50%
• Deposited Film 50%
• Ru Films 50%
• Oxygen Flow Rate 50%

Engineering

• Atomic Layer Deposition 100%
• Flow Rate 50%
• Energy Engineering 50%
• Deposited Film 50%
• Silicon Wafer 50%
• X-Ray Diffraction Analysis 50%
• Oxygen Gas 50%
• Coefficient of Expansion 50%
• Gas-Phase 50%
• Supply Condition 50%
• Flow Velocity 50%
• Scanning Electron Microscope 50%
• Energy dispersive spectrometry 50%

Material Science

• Film 100%
• Ruthenium 100%
• Oxidant 66%
• Energy-Dispersive X-Ray Spectroscopy 66%
• Scanning Electron Microscopy 33%
• Thermal Expansion 33%
• Silicon Wafer 33%
• X Ray Diffraction Analysis 33%
• Film Growth 33%
• Surface (Surface Science) 33%