Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Tae Hwan Kim, Jungpil Seo, Byoung Young Choi, Young Jae Song, Jehyuk Choi, Young Kuk, Se Jong Kahng

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1 Citation (Scopus)


The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.

Original languageEnglish
Article number123112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2005 Sept 19

Bibliographical note

Funding Information:
The authors acknowledge financial support by the Ministry of Science and Technology of Korea (National Creative Research Initiatives and National R&D Project for Nano- Science and Technology), by the Ministry of Commerce, Industry and Energy of Korea (Nano-Standard Project), and by Korea Research Foundation (KRF-2004-005-C00060).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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