Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces

David Gohlke; Rohan Mishra; Oscar D. Restrepo; Donghun Lee; Wolfgang Windl; Jay Gupta

doi:10.1021/nl400305q

Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces

David Gohlke, Rohan Mishra, Oscar D. Restrepo, Donghun Lee, Wolfgang Windl, Jay Gupta

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.

Original language	English
Pages (from-to)	2418-2422
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1021/nl400305q
Publication status	Published - 2013 Jun 12
Externally published	Yes

Keywords

GaAs
Surface potential
atomic manipulation
charged adatoms
solotronics

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl400305q

Cite this

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AU - Gohlke, David

AU - Mishra, Rohan

AU - Restrepo, Oscar D.

AU - Lee, Donghun

AU - Windl, Wolfgang

AU - Gupta, Jay

PY - 2013/6/12

Y1 - 2013/6/12

N2 - A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.

AB - A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.

KW - GaAs

KW - Surface potential

KW - atomic manipulation

KW - charged adatoms

KW - solotronics

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Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces

Abstract

Keywords

ASJC Scopus subject areas

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