Atomic structure and energetics of vacancies in a sublayer of GaAs(110)

Jae Yel Yi; Ja Yong Koo; Sekyung Lee; Dong Hyuk Shin; Jeong Sook Ha

doi:10.1016/S0218-625X(00)00008-7

Atomic structure and energetics of vacancies in a sublayer of GaAs(110)

Jae Yel Yi, Ja Yong Koo, Sekyung Lee, Dong Hyuk Shin, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

Abstract

The energetics and structure of vacancies in the second layer of GaAs(110) were examined using the ab initio total energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.

Original language	English
Pages (from-to)	55-59
Number of pages	5
Journal	Surface Review and Letters
Volume	7
Issue number	1-2
DOIs	https://doi.org/10.1016/S0218-625X(00)00008-7
Publication status	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0218-625X(00)00008-7

Cite this

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abstract = "The energetics and structure of vacancies in the second layer of GaAs(110) were examined using the ab initio total energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.",

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AU - Ha, Jeong Sook

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AB - The energetics and structure of vacancies in the second layer of GaAs(110) were examined using the ab initio total energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.

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Atomic structure and energetics of vacancies in a sublayer of GaAs(110)

Abstract

ASJC Scopus subject areas

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