Bar-Grid Oscillators

Zoya Basta Popović; Robert M. Weikle; Moonil Kim; Kent A. Potter; David B. Rutledge

doi:10.1109/22.45341

Bar-Grid Oscillators

Zoya Basta Popović, Robert M. Weikle, Moonil Kim, Kent A. Potter, David B. Rutledge

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Grid oscillators are an attractive way of obtaining high power levels front solid-state devices, since potentially the output powers of thousands of individual devices can be combined. The active devices do not require an external locking signal and the power combining is done in free space. In this work, 36 transistors are mounted on parallel brass bars, which provide a stable bias and have a low thermal resistance. The output power degrades gradually when devices fail. The grid gives an effective radiated power (ERP) of 3 W at 3 GHz. The directivity is 11.3 dB and the dc to RF efficiency is 22 percent. Modulation capabilities of the grid are demonstrated. An equivalent circuit model for the grid is derived, and comparison with experimental results is shown.

Original language	English
Pages (from-to)	225-230
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	38
Issue number	3
DOIs	https://doi.org/10.1109/22.45341
Publication status	Published - 1990 Mar

Bibliographical note

Funding Information:
Manuscript received August 10. 1989; revised November 6, 1989. This work was supported by the Army Research Office and the Northrop Corporation. The authors arc with the Division of Engineering and Applied California Institute of Technology, Pasadena, CA 91125. IEEE Log Number 8933248.

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.45341

Cite this

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abstract = "Grid oscillators are an attractive way of obtaining high power levels front solid-state devices, since potentially the output powers of thousands of individual devices can be combined. The active devices do not require an external locking signal and the power combining is done in free space. In this work, 36 transistors are mounted on parallel brass bars, which provide a stable bias and have a low thermal resistance. The output power degrades gradually when devices fail. The grid gives an effective radiated power (ERP) of 3 W at 3 GHz. The directivity is 11.3 dB and the dc to RF efficiency is 22 percent. Modulation capabilities of the grid are demonstrated. An equivalent circuit model for the grid is derived, and comparison with experimental results is shown.",

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AU - Rutledge, David B.

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Bar-Grid Oscillators

Abstract

Bibliographical note

ASJC Scopus subject areas

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