Barrier height at the graphene and carbon nanotube junction

Tae Geun Kim, Un Jeong Kim, Si Young Lee, Young Hee Lee, Yun Seop Yu, Sung Woo Hwang, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

Original languageEnglish
Article number6810140
Pages (from-to)2203-2207
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2014 Jun


  • Barrier height
  • FET
  • carbon nanotube (CNT)
  • graphene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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