Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Hyeonseok Woo; Jongkyong Lee; Yongcheol Jo; Jaeseok Han; Jongmin Kim; Hyungsang Kim; Cheong Hyun Roh; Jun Ho Lee; Jungho Park; Cheol Koo Hahn; Hyunsik Im

doi:10.1016/j.cap.2015.06.004

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Hyeonseok Woo, Jongkyong Lee, Yongcheol Jo, Jaeseok Han, Jongmin Kim, Hyungsang Kim, Cheong Hyun Roh, Jun Ho Lee, Jungho Park, Cheol Koo Hahn, Hyunsik Im

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga₂O₃ on the GaN surface. The formation of Ga₂O₃ reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.

Original language	English
Pages (from-to)	1027-1031
Number of pages	5
Journal	Current Applied Physics
Volume	15
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2015.06.004
Publication status	Published - 2015 Jun 29

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program and National Honor Scientist Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2015R1A2A2A01004782 ).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

AlGaN/GaN device
Interface state density
Oxygen annealing
Schottky barrier diode
Surface treatment
Turn-on voltage

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2015.06.004

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title = "Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer",

abstract = "We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.",

keywords = "AlGaN/GaN device, Interface state density, Oxygen annealing, Schottky barrier diode, Surface treatment, Turn-on voltage",

author = "Hyeonseok Woo and Jongkyong Lee and Yongcheol Jo and Jaeseok Han and Jongmin Kim and Hyungsang Kim and Roh, {Cheong Hyun} and Lee, {Jun Ho} and Jungho Park and Hahn, {Cheol Koo} and Hyunsik Im",

note = "Funding Information: This research was supported by Basic Science Research Program and National Honor Scientist Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2015R1A2A2A01004782 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = jun,

day = "29",

doi = "10.1016/j.cap.2015.06.004",

language = "English",

volume = "15",

pages = "1027--1031",

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AU - Woo, Hyeonseok

AU - Lee, Jongkyong

AU - Jo, Yongcheol

AU - Han, Jaeseok

AU - Kim, Jongmin

AU - Kim, Hyungsang

AU - Roh, Cheong Hyun

AU - Lee, Jun Ho

AU - Park, Jungho

AU - Hahn, Cheol Koo

AU - Im, Hyunsik

N1 - Funding Information: This research was supported by Basic Science Research Program and National Honor Scientist Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2015R1A2A2A01004782 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/6/29

Y1 - 2015/6/29

N2 - We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.

AB - We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.

KW - AlGaN/GaN device

KW - Interface state density

KW - Oxygen annealing

KW - Schottky barrier diode

KW - Surface treatment

KW - Turn-on voltage

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SN - 1567-1739

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JO - Current Applied Physics

JF - Current Applied Physics

IS - 9

ER -

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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