Keyphrases
AlGaN-GaN
100%
Barrier Lowering
100%
Ga2O3
66%
GaN Cap Layer
100%
GaN Schottky Barrier Diode
33%
GaN Schottky Diodes
100%
GaN Surface
66%
Interface State Density
66%
Leakage Current
33%
Leakage Current Characteristics
33%
Leakage Current Reduction
100%
Metal-induced Gap States
33%
Order of Magnitude
33%
Oxygen Annealing
100%
Oxygen Effect
33%
Reverse Bias
33%
Schottky Barrier
33%
Schottky Barrier Height
66%
Spectroscopic Measurement
33%
Surface States
33%
Terman Method
33%
Turn-on Voltage
33%
Voltage Bias
33%
X-ray Photoelectron Spectroscopy
33%
Engineering
Barrier Height
66%
Cap Layer
100%
Interface State
66%
Ray Photoelectron Spectroscopy
33%
Reverse Bias
33%
Schottky Barrier
100%
Schottky Barrier Diode
33%
Surface State
33%
Material Science
Annealing
25%
Density
50%
Schottky Barrier
100%
Schottky Diode
100%
Surface (Surface Science)
75%
X-Ray Photoelectron Spectroscopy
25%