BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors

Beom Jong Kim; Young Hun Jeong; Bo Yun Jang; Jong Bong Lim; Sahn Nahm; Ho Jung Sun; Hwack Joo Lee

doi:10.1109/LED.2006.881085

BaSm₂Ti₄O₁₂ thin film for high-performance metal-insulator-metal capacitors

Beom Jong Kim, Young Hun Jeong, Bo Yun Jang, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A high capacitance density of 4.84 fF/μm² and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm₂Ti₄O₁₂ (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm² and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V² and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V² and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

Original language	English
Pages (from-to)	740-742
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	9
DOIs	https://doi.org/10.1109/LED.2006.881085
Publication status	Published - 2006 Sept

Keywords

Capacitor
High-κ
Metal-insulator-metal (MIM)
Temperature coefficient of capacitance (TCC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.881085

Cite this

@article{ed5826089ebe418888781f4b3fc55604,

title = "BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors",

abstract = "A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.",

keywords = "Capacitor, High-κ, Metal-insulator-metal (MIM), Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",

author = "Kim, {Beom Jong} and Jeong, {Young Hun} and Jang, {Bo Yun} and Lim, {Jong Bong} and Sahn Nahm and Sun, {Ho Jung} and Lee, {Hwack Joo}",

note = "Funding Information: Manuscript received April 26, 2006. This work was supported by the Ministry of Science and Technology through the Nano-Technology project and the Ministry of Science and Technology through the National Research Laboratory (NRL) project. The review of this letter was arranged by Editor C. Chorng-Ping.",

year = "2006",

month = sep,

doi = "10.1109/LED.2006.881085",

language = "English",

volume = "27",

pages = "740--742",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors

AU - Kim, Beom Jong

AU - Jeong, Young Hun

AU - Jang, Bo Yun

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Sun, Ho Jung

AU - Lee, Hwack Joo

N1 - Funding Information: Manuscript received April 26, 2006. This work was supported by the Ministry of Science and Technology through the Nano-Technology project and the Ministry of Science and Technology through the National Research Laboratory (NRL) project. The review of this letter was arranged by Editor C. Chorng-Ping.

PY - 2006/9

Y1 - 2006/9

N2 - A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

AB - A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

KW - Capacitor

KW - High-κ

KW - Metal-insulator-metal (MIM)

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

UR - http://www.scopus.com/inward/record.url?scp=33748478803&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.881085

DO - 10.1109/LED.2006.881085

M3 - Article

AN - SCOPUS:33748478803

SN - 0741-3106

VL - 27

SP - 740

EP - 742

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -