BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors

Beom Jong Kim, Young Hun Jeong, Bo Yun Jang, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

    Original languageEnglish
    Pages (from-to)740-742
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume27
    Issue number9
    DOIs
    Publication statusPublished - 2006 Sept

    Bibliographical note

    Funding Information:
    Manuscript received April 26, 2006. This work was supported by the Ministry of Science and Technology through the Nano-Technology project and the Ministry of Science and Technology through the National Research Laboratory (NRL) project. The review of this letter was arranged by Editor C. Chorng-Ping.

    Keywords

    • Capacitor
    • High-κ
    • Metal-insulator-metal (MIM)
    • Temperature coefficient of capacitance (TCC)
    • Voltage coefficient of capacitance (VCC)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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