BaTi 4O 9 thin films for high-performance metal-insulator-metal capacitors

Bo Yun Jang, Beom Jong Kim, Suk Jin Lee, Kyong Jae Lee, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The dielectric and electrical properties of a BaTi4 O9 film were investigated in order to evaluate its potential use in metal-insulator-metal (MIM) capacitors for rf/mixed signal integrated circuits. A high capacitance density of 4.62 fFμ m2 along with a low tan δ of 0.0025 were obtained at 100 kHz. A high capacitance density of 4.12 fFμ m2 and a high quality factor of 322 were also achieved at 2 GHz. The leakage current density was approximately 1 nA cm2 at ±2 V. Small linear and quadratic voltage coefficients of capacitance of 110 ppmV and 40.05 ppm V2, respectively, and a small temperature coefficient of capacitance of -92.157 ppm°C at 100 kHz were obtained. These results demonstrate that the BaTi4 O9 film is a good candidate material for MIM capacitors.

Original languageEnglish
Article number112902
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2005 Sept 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'BaTi 4O 9 thin films for high-performance metal-insulator-metal capacitors'. Together they form a unique fingerprint.

Cite this