BaTiO 3 Doped Na 0.5K 0.5Nbo 3 thin films deposited by using eclipse shutter enhanced pulsed laser deposition method

J. S. Choi; L. R. Hwang; S. H. Hong; G. T. Oh; J. A. Choi; S. H. Jeon; S. O. Kang; Vadim Sh Yalishev; B. H. Park; Chang Hak Choi; Cheol Woo Ann; Sahn Nahm; Sang Jun Ann

doi:10.1166/jnn.2009.1759

BaTiO ₃ Doped Na _0.5K _0.5Nbo ₃ thin films deposited by using eclipse shutter enhanced pulsed laser deposition method

J. S. Choi, L. R. Hwang, S. H. Hong, G. T. Oh, J. A. Choi, S. H. Jeon, S. O. Kang, Vadim Sh Yalishev, B. H. Park, Chang Hak Choi, Cheol Woo Ann, Sahn Nahm, Sang Jun Ann

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTi0 ₃ doped Na _0.5K _0.5Nb-O ₃ (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La _0.5Sr _0.5Co0 ₃ (LSCO) bottom electrodes with LaAI0 ₃ (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d ₃₃ values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pnW, respectively.

Original language	English
Pages (from-to)	7354-7358
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	9
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2009.1759
Publication status	Published - 2009 Dec

Keywords

BTO-NKN
Eclipse method
Lead-free piezoelectric
Pld
Thin film

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2009.1759

Cite this

Choi, J. S., Hwang, L. R., Hong, S. H., Oh, G. T., Choi, J. A., Jeon, S. H., Kang, S. O., Yalishev, V. S., Park, B. H., Choi, C. H., Ann, C. W., Nahm, S., & Ann, S. J. (2009). BaTiO ₃ Doped Na _0.5K _0.5Nbo ₃ thin films deposited by using eclipse shutter enhanced pulsed laser deposition method. Journal of Nanoscience and Nanotechnology, 9(12), 7354-7358. https://doi.org/10.1166/jnn.2009.1759

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title = "BaTiO 3 Doped Na 0.5K 0.5Nbo 3 thin films deposited by using eclipse shutter enhanced pulsed laser deposition method",

abstract = "We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTi0 3 doped Na 0.5K 0.5Nb-O 3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La 0.5Sr 0.5Co0 3 (LSCO) bottom electrodes with LaAI0 3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d 33 values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pnW, respectively.",

keywords = "BTO-NKN, Eclipse method, Lead-free piezoelectric, Pld, Thin film",

author = "Choi, {J. S.} and Hwang, {L. R.} and Hong, {S. H.} and Oh, {G. T.} and Choi, {J. A.} and Jeon, {S. H.} and Kang, {S. O.} and Yalishev, {Vadim Sh} and Park, {B. H.} and Choi, {Chang Hak} and Ann, {Cheol Woo} and Sahn Nahm and Ann, {Sang Jun}",

year = "2009",

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doi = "10.1166/jnn.2009.1759",

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AU - Hwang, L. R.

AU - Hong, S. H.

AU - Oh, G. T.

AU - Choi, J. A.

AU - Jeon, S. H.

AU - Kang, S. O.

AU - Yalishev, Vadim Sh

AU - Park, B. H.

AU - Choi, Chang Hak

AU - Ann, Cheol Woo

AU - Nahm, Sahn

AU - Ann, Sang Jun

PY - 2009/12

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N2 - We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTi0 3 doped Na 0.5K 0.5Nb-O 3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La 0.5Sr 0.5Co0 3 (LSCO) bottom electrodes with LaAI0 3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d 33 values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pnW, respectively.

AB - We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTi0 3 doped Na 0.5K 0.5Nb-O 3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La 0.5Sr 0.5Co0 3 (LSCO) bottom electrodes with LaAI0 3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d 33 values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pnW, respectively.

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