BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications

Ho Jung Sun; Bo Yun Jang; Young Hun Jung; Suk Jin Lee; Sahn Nahm

doi:10.1143/jjap.43.l628

BaTi₄O₉ thin film prepared by rf magnetron sputtering for microwave applications

Ho Jung Sun
, Bo Yun Jang
, Young Hun Jung
, Suk Jin Lee
, Sahn Nahm^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We attempted to produce BaTi₄O₉ dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi₄O₉ film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.

Original language	English
Pages (from-to)	L628-L630
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.43.l628
Publication status	Published - 2004 May 1

Keywords

BaTio
Dielectric property
Microwave
Thin film

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.43.l628

Cite this

@article{175986e51e9840369b5d3549c694e21d,

title = "BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications",

abstract = "We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98\% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.",

keywords = "BaTio, Dielectric property, Microwave, Thin film",

author = "Sun, \{Ho Jung\} and Jang, \{Bo Yun\} and Jung, \{Young Hun\} and Lee, \{Suk Jin\} and Sahn Nahm",

year = "2004",

month = may,

day = "1",

doi = "10.1143/jjap.43.l628",

language = "English",

volume = "43",

pages = "L628--L630",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "5 A",

}

TY - JOUR

T1 - BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications

AU - Sun, Ho Jung

AU - Jang, Bo Yun

AU - Jung, Young Hun

AU - Lee, Suk Jin

AU - Nahm, Sahn

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.

AB - We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.

KW - BaTio

KW - Dielectric property

KW - Microwave

KW - Thin film

UR - https://www.scopus.com/pages/publications/3142643321

U2 - 10.1143/jjap.43.l628

DO - 10.1143/jjap.43.l628

M3 - Article

AN - SCOPUS:3142643321

SN - 0021-4922

VL - 43

SP - L628-L630

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 5 A

ER -