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Behavior of subthreshold conduction in junctionless transistors
So Jeong Park
, Dae Young Jeon
, Laurent Montès
, Mireille Mouis
, Sylvain Barraud
,
Gyu Tae Kim
*
, Gérard Ghibaudo
*
Corresponding author for this work
School of Electrical Engineering
Smart Quantum Communication Research Center
Research output
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Contribution to journal
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Article
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peer-review
6
Citations (Scopus)
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Keyphrases
Junctionless Transistor
100%
Subthreshold Conduction
100%
Effective Barrier Height
40%
Transistor
20%
Unique Structure
20%
Bias Effect
20%
Conduction Regime
20%
Gate Controllability
20%
Drain Bias
20%
Inversion Mode
20%
Short Channel Effects
20%
Channel Doping
20%
Subthreshold Regime
20%
Engineering
Barrier Height
100%
Experimental Result
50%
Drain Bias
50%
Channel Region
50%
Controllability
50%