In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.
Bibliographical noteFunding Information:
This work was partly supported by a National Research Foundation of Korea Grant funded by the Korean government (MSIP) ( NRF-2016R1E1A1A02920171 ), the Brain Korea 21 Plus Project in 2018, and Samsung Display Co., Ltd . This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea ) under the Industrial Strategic Technology Development Program . ( 10067791 , "Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence").
- Bending strain
- Flexible display
- TCAD simulation
- a-IGZO TFT
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering