TY - JOUR
T1 - Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors
AU - Woo, Sola
AU - Kim, Minsuk
AU - Oh, Hyungon
AU - Cho, Kyoungah
AU - Kim, Sangsig
N1 - Funding Information:
This work was partly supported by a National Research Foundation of Korea Grant funded by the Korean government (MSIP) ( NRF-2016R1E1A1A02920171 ), the Brain Korea 21 Plus Project in 2018, and Samsung Display Co., Ltd . This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea ) under the Industrial Strategic Technology Development Program . ( 10067791 , "Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence").
Publisher Copyright:
© 2018
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/8
Y1 - 2018/8
N2 - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.
AB - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.
KW - Bending strain
KW - Flexible display
KW - TCAD simulation
KW - a-IGZO TFT
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U2 - 10.1016/j.spmi.2018.05.009
DO - 10.1016/j.spmi.2018.05.009
M3 - Article
AN - SCOPUS:85056309164
SN - 0749-6036
VL - 120
SP - 60
EP - 66
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -