Abstract
In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 60-66 |
| Number of pages | 7 |
| Journal | Superlattices and Microstructures |
| Volume | 120 |
| DOIs | |
| Publication status | Published - 2018 Aug |
Bibliographical note
Funding Information:This work was partly supported by a National Research Foundation of Korea Grant funded by the Korean government (MSIP) ( NRF-2016R1E1A1A02920171 ), the Brain Korea 21 Plus Project in 2018, and Samsung Display Co., Ltd . This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea ) under the Industrial Strategic Technology Development Program . ( 10067791 , "Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence").
Publisher Copyright:
© 2018
Keywords
- Bending strain
- Flexible display
- TCAD simulation
- a-IGZO TFT
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering