Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Sola Woo; Minsuk Kim; Hyungon Oh; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.spmi.2018.05.009

Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Sola Woo, Minsuk Kim, Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

Original language	English
Pages (from-to)	60-66
Number of pages	7
Journal	Superlattices and Microstructures
Volume	120
DOIs	https://doi.org/10.1016/j.spmi.2018.05.009
Publication status	Published - 2018 Aug

Bibliographical note

Publisher Copyright:
© 2018

Keywords

Bending strain
Flexible display
TCAD simulation
a-IGZO TFT

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2018.05.009

Cite this

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title = "Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors",

abstract = "In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.",

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T1 - Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

AU - Woo, Sola

AU - Kim, Minsuk

AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2018/8

Y1 - 2018/8

N2 - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

AB - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

KW - Bending strain

KW - Flexible display

KW - TCAD simulation

KW - a-IGZO TFT

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DO - 10.1016/j.spmi.2018.05.009

M3 - Article

AN - SCOPUS:85056309164

SN - 0749-6036

VL - 120

SP - 60

EP - 66

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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