Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics

Heesung Kong, Kyoungah Cho, Hosang Lee, Seungjun Lee, Junhyung Lim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–zinc-oxide thin-film transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm2/V &·s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.

Original languageEnglish
Article number106527
JournalMaterials Science in Semiconductor Processing
Volume143
DOIs
Publication statusPublished - 2022 Jun 1

Bibliographical note

Funding Information:
This study was supported in part by Samsung Display Co. Ltd., and it was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) ( 2020R1A2C3004538 ), the Technology Development Program to Solve Climate Change ( NRF-2017M1A2A2087323 ), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning , and the Korea University Grant.

Publisher Copyright:
© 2022 Elsevier Ltd

Keywords

  • Amorphous indium–tin–gallium–zinc-oxide
  • Hafnium aluminum oxide
  • Hafnium oxide
  • Hysteresis
  • Negative gate-bias stress
  • Positive gate-bias stress

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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