Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics

Heesung Kong; Kyoungah Cho; Hosang Lee; Seungjun Lee; Junhyung Lim; Sangsig Kim

doi:10.1016/j.mssp.2022.106527

Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO₂ and HfAlO gate dielectrics

Heesung Kong, Kyoungah Cho, Hosang Lee, Seungjun Lee, Junhyung Lim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–zinc-oxide thin-film transistors (TFTs) (a-ITGZO TFTs) with HfO₂ and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO₂ and HfAlO were 32.3 and 26.4 cm²/V &·s, respectively. The TFT with HfO₂ showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO₂ was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.

Original language	English
Article number	106527
Journal	Materials Science in Semiconductor Processing
Volume	143
DOIs	https://doi.org/10.1016/j.mssp.2022.106527
Publication status	Published - 2022 Jun 1

Keywords

Amorphous indium–tin–gallium–zinc-oxide
Hafnium aluminum oxide
Hafnium oxide
Hysteresis
Negative gate-bias stress
Positive gate-bias stress

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2022.106527

Cite this

@article{c48fdb1a56434022955844fff75711f9,

title = "Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics",

abstract = "In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–zinc-oxide thin-film transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm2/V &·s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.",

keywords = "Amorphous indium–tin–gallium–zinc-oxide, Hafnium aluminum oxide, Hafnium oxide, Hysteresis, Negative gate-bias stress, Positive gate-bias stress",

author = "Heesung Kong and Kyoungah Cho and Hosang Lee and Seungjun Lee and Junhyung Lim and Sangsig Kim",

note = "Funding Information: This study was supported in part by Samsung Display Co. Ltd., and it was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) ( 2020R1A2C3004538 ), the Technology Development Program to Solve Climate Change ( NRF-2017M1A2A2087323 ), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning , and the Korea University Grant. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

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doi = "10.1016/j.mssp.2022.106527",

language = "English",

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journal = "Materials Science in Semiconductor Processing",

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T1 - Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics

AU - Kong, Heesung

AU - Cho, Kyoungah

AU - Lee, Hosang

AU - Lee, Seungjun

AU - Lim, Junhyung

AU - Kim, Sangsig

N1 - Funding Information: This study was supported in part by Samsung Display Co. Ltd., and it was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) ( 2020R1A2C3004538 ), the Technology Development Program to Solve Climate Change ( NRF-2017M1A2A2087323 ), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning , and the Korea University Grant. Publisher Copyright: © 2022 Elsevier Ltd

PY - 2022/6/1

Y1 - 2022/6/1

N2 - In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–zinc-oxide thin-film transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm2/V &·s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.

AB - In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–zinc-oxide thin-film transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm2/V &·s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.

KW - Amorphous indium–tin–gallium–zinc-oxide

KW - Hafnium aluminum oxide

KW - Hafnium oxide

KW - Hysteresis

KW - Negative gate-bias stress

KW - Positive gate-bias stress

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