Abstract
The influence of the hydrogen annealing treatment on the reliability of Ti/HfOx /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N2-annealed sample, in the case of hydrogen-annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/-1.6 V to 3.8 V/-1.2 V and from 4 mA/170 nA to 800 μA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 μA to 40 nA under a bias stress of -1 V/1000 s and from 40 μA to 0.5 μA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress.
Original language | English |
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Pages (from-to) | 497-500 |
Number of pages | 4 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 7 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2013 Jul |
Keywords
- Bias temperature instability
- HfO
- Hydrogen annealing
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics