Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The influence of the hydrogen annealing treatment on the reliability of Ti/HfOx /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N2-annealed sample, in the case of hydrogen-annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/-1.6 V to 3.8 V/-1.2 V and from 4 mA/170 nA to 800 μA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 μA to 40 nA under a bias stress of -1 V/1000 s and from 40 μA to 0.5 μA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress.

    Original languageEnglish
    Pages (from-to)497-500
    Number of pages4
    JournalPhysica Status Solidi - Rapid Research Letters
    Volume7
    Issue number7
    DOIs
    Publication statusPublished - 2013 Jul

    Keywords

    • Bias temperature instability
    • HfO
    • Hydrogen annealing

    ASJC Scopus subject areas

    • General Materials Science
    • Condensed Matter Physics

    Fingerprint

    Dive into the research topics of 'Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors'. Together they form a unique fingerprint.

    Cite this