Bias Temperature Instability of Multilayer ReS₂ FET with α-MoO₃ Passivation

2D semiconductors are regarded as promising candidates for channel applications in the next generation of field effect transistors (FETs) with sub-5 nm pitch designs. Among 2D transition metal dichalcogenides (TMDs), rhenium disulfide (ReS₂) is reported to have weak interaction among neighboring layers, resulting in more susceptibility to the functionalization of the surface channel. The bias temperature instability (BTI) of ReS₂ FETs with α-molybdenum trioxide (α-MoO₃) passivation that functions as a charge buffer layer is investigated. The transconductance (g_m) with a passivation layer shows the saturation behavior under the critical gate voltage even with cumulative electric stress. In addition, unintentional shifts of threshold voltages (V_TH) are significantly reduced, which is attributed to the effects of the α-MoO₃ passivation. The electron transfer with the passivation effect suggests a way of surface engineering for controlling the 2D devices with enhanced stabilities.