2D semiconductors are regarded as promising candidates for channel applications in the next generation of field effect transistors (FETs) with sub-5 nm pitch designs. Among 2D transition metal dichalcogenides (TMDs), rhenium disulfide (ReS2) is reported to have weak interaction among neighboring layers, resulting in more susceptibility to the functionalization of the surface channel. The bias temperature instability (BTI) of ReS2 FETs with α-molybdenum trioxide (α-MoO3) passivation that functions as a charge buffer layer is investigated. The transconductance (gm) with a passivation layer shows the saturation behavior under the critical gate voltage even with cumulative electric stress. In addition, unintentional shifts of threshold voltages (VTH) are significantly reduced, which is attributed to the effects of the α-MoO3 passivation. The electron transfer with the passivation effect suggests a way of surface engineering for controlling the 2D devices with enhanced stabilities.
Bibliographical noteFunding Information:
J.C. and J.L. contributed equally to this work. This research was supported by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF‐2017M3A7B4049119).
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- bias temperature instabilities
- electron transfers
- rhenium disulfide
- α-molybdenum trioxide
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering