Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

Byong Sun Chun; Seung Pil Ko; Young Keun Kim; Jae Youn Hwang; Jang Roh Rhee; Taewan Kim; Jae Seon Ju

doi:10.1063/1.2165129

Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

Byong Sun Chun, Seung Pil Ko, Young Keun Kim, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Jae Seon Ju

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.

Original language	English
Article number	08A902
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2165129
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the Korea Ministry of Science and Technology under a contract with the National Research Laboratory Program, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers",

abstract = "A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.",

author = "Chun, {Byong Sun} and Ko, {Seung Pil} and Kim, {Young Keun} and Hwang, {Jae Youn} and Rhee, {Jang Roh} and Taewan Kim and Ju, {Jae Seon}",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology under a contract with the National Research Laboratory Program, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program. ",

year = "2006",

doi = "10.1063/1.2165129",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

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T1 - Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

AU - Chun, Byong Sun

AU - Ko, Seung Pil

AU - Kim, Young Keun

AU - Hwang, Jae Youn

AU - Rhee, Jang Roh

AU - Kim, Taewan

AU - Ju, Jae Seon

N1 - Funding Information: This work was supported by the Korea Ministry of Science and Technology under a contract with the National Research Laboratory Program, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

PY - 2006

Y1 - 2006

N2 - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.

AB - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.

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DO - 10.1063/1.2165129

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VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

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