Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

You Song Kim; Byong Sun Chun; Deok Kee Kim; Young Keun Kim

doi:10.1109/TMAG.2006.879720

Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

You Song Kim, Byong Sun Chun, Deok Kee Kim, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO_∞/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni₁₆Fe₆₂Si₈B₁₄ 7 nm, Co₉₀Fe₁₀ (fcc) 7 nm, or CoFe t₁/NiFeSiB t₂/CoFe t₁ layer in which the thicknesses t₁ and t₂ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of 86 k Ω μm², a coercivity (H_c) of 11 Oe, and an interlayer coupling field (Hi) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of 68 k Ωμm², and a H_cof 11 Oe, but an increased Hi of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that Hi increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and H_ibecame large because of the magnetostatic Neel coupling.

Original language	English
Pages (from-to)	2649-2651
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2006.879720
Publication status	Published - 2006 Oct

Keywords

Amorphous materials
NiFeSiB
bias voltage dependence
double-barrier magnetic tunnel junction (DMTJ)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2006.879720

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@article{bd8a29c5c4b341a99a7b859cc69eb61a,

title = "Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer",

abstract = "The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO∞/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni16Fe62Si8B14 7 nm, Co90Fe10 (fcc) 7 nm, or CoFe t1/NiFeSiB t2/CoFe t1 layer in which the thicknesses t1 and t2 are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of 86 k Ω μm2, a coercivity (Hc) of 11 Oe, and an interlayer coupling field (Hi) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of 68 k Ωμm2, and a Hcof 11 Oe, but an increased Hi of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that Hi increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and Hibecame large because of the magnetostatic Neel coupling.",

keywords = "Amorphous materials, NiFeSiB, bias voltage dependence, double-barrier magnetic tunnel junction (DMTJ)",

author = "Kim, {You Song} and Chun, {Byong Sun} and Kim, {Deok Kee} and Kim, {Young Keun}",

year = "2006",

month = oct,

doi = "10.1109/TMAG.2006.879720",

language = "English",

volume = "42",

pages = "2649--2651",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

AU - Kim, You Song

AU - Chun, Byong Sun

AU - Kim, Deok Kee

AU - Kim, Young Keun

PY - 2006/10

Y1 - 2006/10

N2 - The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO∞/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni16Fe62Si8B14 7 nm, Co90Fe10 (fcc) 7 nm, or CoFe t1/NiFeSiB t2/CoFe t1 layer in which the thicknesses t1 and t2 are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of 86 k Ω μm2, a coercivity (Hc) of 11 Oe, and an interlayer coupling field (Hi) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of 68 k Ωμm2, and a Hcof 11 Oe, but an increased Hi of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that Hi increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and Hibecame large because of the magnetostatic Neel coupling.

AB - The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO∞/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni16Fe62Si8B14 7 nm, Co90Fe10 (fcc) 7 nm, or CoFe t1/NiFeSiB t2/CoFe t1 layer in which the thicknesses t1 and t2 are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of 86 k Ω μm2, a coercivity (Hc) of 11 Oe, and an interlayer coupling field (Hi) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of 68 k Ωμm2, and a Hcof 11 Oe, but an increased Hi of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that Hi increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and Hibecame large because of the magnetostatic Neel coupling.

KW - Amorphous materials

KW - NiFeSiB

KW - bias voltage dependence

KW - double-barrier magnetic tunnel junction (DMTJ)

UR - http://www.scopus.com/inward/record.url?scp=85008035287&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2006.879720

DO - 10.1109/TMAG.2006.879720

M3 - Article

AN - SCOPUS:85008035287

SN - 0018-9464

VL - 42

SP - 2649

EP - 2651

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

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