Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers
- Byong Sun Chun
- , Seung Pil Ko
- , Young Keun Kim*
- , Jae Youn Hwang
- , Jang Roh Rhee
- , Taewan Kim
- , Jae Seon Ju
*Corresponding author for this work
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