Skip to main navigation
Skip to search
Skip to main content
Korea University Pure Home
Home
Profiles
Research units
Equipment
Research output
Press/Media
Search by expertise, name or affiliation
Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers
Byong Sun Chun
, Seung Pil Ko
,
Young Keun Kim
*
, Jae Youn Hwang
, Jang Roh Rhee
, Taewan Kim
, Jae Seon Ju
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
7
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
AlOx
50%
Bias Voltage Dependence
100%
Breakdown Voltage
25%
CoFe
75%
Coupled Field
25%
Double Barrier
100%
Double-barrier Magnetic Tunnel Junction
100%
Free Layer
75%
Interlayer Coupling
25%
Junction Breakdown
25%
Junction Structure
25%
Magnetic Tunnel Junction
100%
Nanometre
25%
Root Mean Square
25%
Smooth Surface
25%
Surface Roughness
50%
Tunneling Magnetoresistance
50%
Engineering
Bias Voltage
100%
Breakdown Voltage
20%
Free Layer
60%
Interlayer
20%
Magnetic Tunnel Junction
100%
Nanometre
20%
Root Mean Square
20%
Smooth Surface
20%
Tunnel Construction
40%
Material Science
Surface Roughness
100%
Tunneling Magnetoresistance
100%