Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Se Chung Oh; Seung Young Park; Aurélien Manchon; Mairbek Chshiev; Jae Ho Han; Hyun Woo Lee; Jang Eun Lee; Kyung Tae Nam; Younghun Jo; Yo Chan Kong; Bernard Dieny; Kyung Jin Lee

doi:10.1038/nphys1427

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Se Chung Oh, Seung Young Park, Aurélien Manchon, Mairbek Chshiev, Jae Ho Han, Hyun Woo Lee, Jang Eun Lee, Kyung Tae Nam, Younghun Jo, Yo Chan Kong, Bernard Dieny, Kyung Jin Lee

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191 Citations (Scopus)

Abstract

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

Original language	English
Pages (from-to)	898-902
Number of pages	5
Journal	Nature Physics
Volume	5
Issue number	12
DOIs	https://doi.org/10.1038/nphys1427
Publication status	Published - 2009 Dec
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge S. Zhang, B. C. Min, C.-Y. You and G. E. W. Bauer for discussions and M. H. Jung for measurement set-up. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program (Project No. M10600000198-06J0000-19810) (for K.-J.L.), the Basic Research Program (Contract No. R01-2007-000-20281-0) (for H.-W.L.) funded by the Korean Ministry of Science and Technology and by grant No. KSC-2008-S01-0012 from Korea Institute of Science and Technology Information (for K.-J.L.), the KBSI grant T29513 (for Y.J.), NSF (Contract No. DMR-0704182) (for A.M.), University of Alabama through Adjunct Professorship (for M.C.) and Chair of Excellence Research Program of the Nanosciences Foundation (RTRA) in Grenoble, France (for M.C.).

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1038/nphys1427

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title = "Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions",

abstract = "Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.",

author = "Oh, {Se Chung} and Park, {Seung Young} and Aur{\'e}lien Manchon and Mairbek Chshiev and Han, {Jae Ho} and Lee, {Hyun Woo} and Lee, {Jang Eun} and Nam, {Kyung Tae} and Younghun Jo and Kong, {Yo Chan} and Bernard Dieny and Lee, {Kyung Jin}",

note = "Funding Information: We acknowledge S. Zhang, B. C. Min, C.-Y. You and G. E. W. Bauer for discussions and M. H. Jung for measurement set-up. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program (Project No. M10600000198-06J0000-19810) (for K.-J.L.), the Basic Research Program (Contract No. R01-2007-000-20281-0) (for H.-W.L.) funded by the Korean Ministry of Science and Technology and by grant No. KSC-2008-S01-0012 from Korea Institute of Science and Technology Information (for K.-J.L.), the KBSI grant T29513 (for Y.J.), NSF (Contract No. DMR-0704182) (for A.M.), University of Alabama through Adjunct Professorship (for M.C.) and Chair of Excellence Research Program of the Nanosciences Foundation (RTRA) in Grenoble, France (for M.C.).",

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AU - Oh, Se Chung

AU - Park, Seung Young

AU - Manchon, Aurélien

AU - Chshiev, Mairbek

AU - Han, Jae Ho

AU - Lee, Hyun Woo

AU - Lee, Jang Eun

AU - Nam, Kyung Tae

AU - Jo, Younghun

AU - Kong, Yo Chan

AU - Dieny, Bernard

AU - Lee, Kyung Jin

N1 - Funding Information: We acknowledge S. Zhang, B. C. Min, C.-Y. You and G. E. W. Bauer for discussions and M. H. Jung for measurement set-up. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program (Project No. M10600000198-06J0000-19810) (for K.-J.L.), the Basic Research Program (Contract No. R01-2007-000-20281-0) (for H.-W.L.) funded by the Korean Ministry of Science and Technology and by grant No. KSC-2008-S01-0012 from Korea Institute of Science and Technology Information (for K.-J.L.), the KBSI grant T29513 (for Y.J.), NSF (Contract No. DMR-0704182) (for A.M.), University of Alabama through Adjunct Professorship (for M.C.) and Chair of Excellence Research Program of the Nanosciences Foundation (RTRA) in Grenoble, France (for M.C.).

PY - 2009/12

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N2 - Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

AB - Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

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Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Abstract

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