Binarized Neural Network Comprising Quasi-Nonvolatile Memory Devices for Neuromorphic Computing

Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This study presents a binarized neural network (BNN) comprising quasi-nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply-accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector-matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high-performance neuromorphic computing.

    Original languageEnglish
    Article number2400061
    JournalAdvanced Electronic Materials
    Volume10
    Issue number9
    DOIs
    Publication statusPublished - 2024 Sept

    Bibliographical note

    Publisher Copyright:
    © 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.

    Keywords

    • binarized neural network
    • image recognition
    • multiply-accumulate
    • positive feedback loop
    • quasi-nonvolatile memory

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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