Abstract
This study presents a binarized neural network (BNN) comprising quasi-nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply-accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector-matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high-performance neuromorphic computing.
Original language | English |
---|---|
Article number | 2400061 |
Journal | Advanced Electronic Materials |
Volume | 10 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2024 Sept |
Bibliographical note
Publisher Copyright:© 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
Keywords
- binarized neural network
- image recognition
- multiply-accumulate
- positive feedback loop
- quasi-nonvolatile memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials