Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

Seulki Cho; Seong Ji Min; Myung Yeon Cho; Ik Soo Kim; So Mang Kim; Byung Moo Moon; Kyoung Sook Moon; Daeseok Lee; Jong Min Oh; Sang Mo Koo

doi:10.1016/j.ceramint.2019.05.318

Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

Seulki Cho, Seong Ji Min, Myung Yeon Cho, Ik Soo Kim, So Mang Kim, Byung Moo Moon, Kyoung Sook Moon, Daeseok Lee, Jong Min Oh, Sang Mo Koo

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.

Original language	English
Pages (from-to)	17556-17561
Number of pages	6
Journal	Ceramics International
Volume	45
Issue number	14
DOIs	https://doi.org/10.1016/j.ceramint.2019.05.318
Publication status	Published - 2019 Oct 1

Bibliographical note

Funding Information:
The research was funded by a Research Grant from Kwangwoon University in 2019. Additionally, this work was supported by the High Level Track of Power Semiconductor Technology for Renewable Energy and Electrical Vehicle (No. 20174010201290 ) of the Korea Institute of Energy Technology Evaluation and Planning .

Publisher Copyright:
© 2019 Elsevier Ltd and Techna Group S.r.l.

Keywords

Aerosol deposition
Bipolar conductivity
Heterostructure
Silicon carbide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2019.05.318

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title = "Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process",

abstract = "Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.",

keywords = "Aerosol deposition, Bipolar conductivity, Heterostructure, Silicon carbide",

author = "Seulki Cho and Min, {Seong Ji} and Cho, {Myung Yeon} and Kim, {Ik Soo} and Kim, {So Mang} and Moon, {Byung Moo} and Moon, {Kyoung Sook} and Daeseok Lee and Oh, {Jong Min} and Koo, {Sang Mo}",

note = "Funding Information: The research was funded by a Research Grant from Kwangwoon University in 2019. Additionally, this work was supported by the High Level Track of Power Semiconductor Technology for Renewable Energy and Electrical Vehicle (No. 20174010201290 ) of the Korea Institute of Energy Technology Evaluation and Planning . Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd and Techna Group S.r.l.",

year = "2019",

month = oct,

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doi = "10.1016/j.ceramint.2019.05.318",

language = "English",

volume = "45",

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journal = "Ceramics International",

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T1 - Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

AU - Cho, Seulki

AU - Min, Seong Ji

AU - Cho, Myung Yeon

AU - Kim, Ik Soo

AU - Kim, So Mang

AU - Moon, Byung Moo

AU - Moon, Kyoung Sook

AU - Lee, Daeseok

AU - Oh, Jong Min

AU - Koo, Sang Mo

N1 - Funding Information: The research was funded by a Research Grant from Kwangwoon University in 2019. Additionally, this work was supported by the High Level Track of Power Semiconductor Technology for Renewable Energy and Electrical Vehicle (No. 20174010201290 ) of the Korea Institute of Energy Technology Evaluation and Planning . Publisher Copyright: © 2019 Elsevier Ltd and Techna Group S.r.l.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.

AB - Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.

KW - Aerosol deposition

KW - Bipolar conductivity

KW - Heterostructure

KW - Silicon carbide

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Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

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Keywords

ASJC Scopus subject areas

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