Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications

Tae Geun Seong; Mi Ri Joung; Jong Woo Sun; Min Kyu Yang; Jeon Kook Lee; Ji Won Moon; Jaesung Roh; Sahn Nahm

doi:10.1143/JJAP.51.041102

Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications

Tae Geun Seong, Mi Ri Joung, Jong Woo Sun, Min Kyu Yang, Jeon Kook Lee, Ji Won Moon, Jaesung Roh, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10 ⁴ s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.

Original language	English
Article number	041102
Journal	Japanese journal of applied physics
Volume	51
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.51.041102
Publication status	Published - 2012 Apr

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications",

abstract = "Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10 4 s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.",

author = "Seong, {Tae Geun} and Joung, {Mi Ri} and Sun, {Jong Woo} and Yang, {Min Kyu} and Lee, {Jeon Kook} and Moon, {Ji Won} and Jaesung Roh and Sahn Nahm",

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T1 - Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications

AU - Seong, Tae Geun

AU - Joung, Mi Ri

AU - Sun, Jong Woo

AU - Yang, Min Kyu

AU - Lee, Jeon Kook

AU - Moon, Ji Won

AU - Roh, Jaesung

AU - Nahm, Sahn

PY - 2012/4

Y1 - 2012/4

N2 - Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10 4 s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.

AB - Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10 4 s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.

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DO - 10.1143/JJAP.51.041102

M3 - Article

AN - SCOPUS:84860477434

SN - 0021-4922

VL - 51

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4 PART 1

M1 - 041102

ER -

Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications

Abstract

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