Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

Myung Ju Kim; Dong Su Jeon; Ju Hyun Park; Tae Geun Kim

doi:10.1063/1.4921349

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This paper reports the bipolar resistive switching characteristics of TaN_x-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10⁵s) and pulse-switching endurance (>10⁶ cycles) properties. These results indicate that TaN_x-based ReRAM devices have a potential for future nonvolatile memory devices.

Original language	English
Article number	203101
Journal	Applied Physics Letters
Volume	106
Issue number	20
DOIs	https://doi.org/10.1063/1.4921349
Publication status	Published - 2015 May 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices",

abstract = "This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>105s) and pulse-switching endurance (>106 cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices.",

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AU - Jeon, Dong Su

AU - Park, Ju Hyun

AU - Kim, Tae Geun

PY - 2015/5/18

Y1 - 2015/5/18

N2 - This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>105s) and pulse-switching endurance (>106 cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices.

AB - This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>105s) and pulse-switching endurance (>106 cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices.

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Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

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