TY - JOUR
T1 - Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate
AU - Lee, Beom Seok
AU - Kim, Bo Yun
AU - Lee, Ji Hyeon
AU - Hee Yoo, Jong
AU - Hong, Kwon
AU - Nahm, Sahn
N1 - Funding Information:
This work is supported through SKhynix-Korea University Nano-Semiconductor Program and the Industrial Strategic Technology Development Program, 10041232, funded by the Ministry of Knowlodge Economy (MKE, Korea).
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/12
Y1 - 2014/12
N2 - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.
AB - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.
KW - Conduction mechanism of LRS is explained by the Ohm's law
KW - Forming mechanism is Schottky emission
KW - HRS can be explained by SCLC
KW - Thin film is shown bipolar resistive switching behavior
KW - TiO is deposited on TiN substrate at room temperature
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U2 - 10.1016/j.cap.2014.10.025
DO - 10.1016/j.cap.2014.10.025
M3 - Article
AN - SCOPUS:84909638329
SN - 1567-1739
VL - 14
SP - 1825
EP - 1830
JO - Current Applied Physics
JF - Current Applied Physics
IS - 12
ER -