Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Beom Seok Lee; Bo Yun Kim; Ji Hyeon Lee; Jong Hee Yoo; Kwon Hong; Sahn Nahm

doi:10.1016/j.cap.2014.10.025

Bipolar switching properties of amorphous TiO₂ thin film grown on TiN/Si substrate

Beom Seok Lee, Bo Yun Kim, Ji Hyeon Lee, Jong Hee Yoo, Kwon Hong, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Pt/TiO₂/TiN device with the amorphous TiO₂ film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO₂ film and accumulated at the Pt/TiO₂ interface. The barrier height of the Schottky contact of the Pt/TiO₂ interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO₂ film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

Original language	English
Pages (from-to)	1825-1830
Number of pages	6
Journal	Current Applied Physics
Volume	14
Issue number	12
DOIs	https://doi.org/10.1016/j.cap.2014.10.025
Publication status	Published - 2014 Dec

Bibliographical note

Funding Information:
This work is supported through SKhynix-Korea University Nano-Semiconductor Program and the Industrial Strategic Technology Development Program, 10041232, funded by the Ministry of Knowlodge Economy (MKE, Korea).

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

Conduction mechanism of LRS is explained by the Ohm's law
Forming mechanism is Schottky emission
HRS can be explained by SCLC
Thin film is shown bipolar resistive switching behavior
TiO is deposited on TiN substrate at room temperature

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Access to Document

10.1016/j.cap.2014.10.025

Cite this

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title = "Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate",

abstract = "Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.",

keywords = "Conduction mechanism of LRS is explained by the Ohm's law, Forming mechanism is Schottky emission, HRS can be explained by SCLC, Thin film is shown bipolar resistive switching behavior, TiO is deposited on TiN substrate at room temperature",

author = "Lee, {Beom Seok} and Kim, {Bo Yun} and Lee, {Ji Hyeon} and {Hee Yoo}, Jong and Kwon Hong and Sahn Nahm",

note = "Funding Information: This work is supported through SKhynix-Korea University Nano-Semiconductor Program and the Industrial Strategic Technology Development Program, 10041232, funded by the Ministry of Knowlodge Economy (MKE, Korea). Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2014",

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doi = "10.1016/j.cap.2014.10.025",

language = "English",

volume = "14",

pages = "1825--1830",

journal = "Current Applied Physics",

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AU - Lee, Beom Seok

AU - Kim, Bo Yun

AU - Lee, Ji Hyeon

AU - Hee Yoo, Jong

AU - Hong, Kwon

AU - Nahm, Sahn

N1 - Funding Information: This work is supported through SKhynix-Korea University Nano-Semiconductor Program and the Industrial Strategic Technology Development Program, 10041232, funded by the Ministry of Knowlodge Economy (MKE, Korea). Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2014/12

Y1 - 2014/12

N2 - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

AB - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

KW - Conduction mechanism of LRS is explained by the Ohm's law

KW - Forming mechanism is Schottky emission

KW - HRS can be explained by SCLC

KW - Thin film is shown bipolar resistive switching behavior

KW - TiO is deposited on TiN substrate at room temperature

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