Bistable voltage transition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo; Hyunjung Yi; Joonyeon Chang; Suk Hee Han

doi:10.1109/TMAG.2007.914512

Bistable voltage transition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Hyunjung Yi, Joonyeon Chang, Suk Hee Han

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A traveling electron in the high mobility layer with asymmetric charge distribution induces an effective magnetic field that creates an imbalance of spin-up and spin-down energy levels. If a ferromagnet contacts a two-dimensional electron gas layer, the potential depends on the magnetization direction of the ferromagnetic detector. Two different potential levels can be assigned to "0" and "1" states of nonvolatile memory. This new concept of nonvolatile memory using spin-orbit interaction does not need complex magnetic tunneling layers and additional word writing lines.

Original language	English
Article number	4455702
Pages (from-to)	419-422
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/TMAG.2007.914512
Publication status	Published - 2008 Mar

Bibliographical note

Funding Information:
This work was supported by the KIST Institutional Program.

Keywords

Magnetic memories
Spin imbalance
Spin-orbit interaction
Two-dimensional electron gas

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2007.914512

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abstract = "A traveling electron in the high mobility layer with asymmetric charge distribution induces an effective magnetic field that creates an imbalance of spin-up and spin-down energy levels. If a ferromagnet contacts a two-dimensional electron gas layer, the potential depends on the magnetization direction of the ferromagnetic detector. Two different potential levels can be assigned to {"}0{"} and {"}1{"} states of nonvolatile memory. This new concept of nonvolatile memory using spin-orbit interaction does not need complex magnetic tunneling layers and additional word writing lines.",

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author = "Koo, {Hyun Cheol} and Hyunjung Yi and Joonyeon Chang and Han, {Suk Hee}",

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AU - Yi, Hyunjung

AU - Chang, Joonyeon

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by the KIST Institutional Program.

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AB - A traveling electron in the high mobility layer with asymmetric charge distribution induces an effective magnetic field that creates an imbalance of spin-up and spin-down energy levels. If a ferromagnet contacts a two-dimensional electron gas layer, the potential depends on the magnetization direction of the ferromagnetic detector. Two different potential levels can be assigned to "0" and "1" states of nonvolatile memory. This new concept of nonvolatile memory using spin-orbit interaction does not need complex magnetic tunneling layers and additional word writing lines.

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KW - Spin imbalance

KW - Spin-orbit interaction

KW - Two-dimensional electron gas

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ER -

Bistable voltage transition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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