Abstract
We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).
Original language | English |
---|---|
Pages (from-to) | 9107-9112 |
Number of pages | 6 |
Journal | Nanoscale |
Volume | 8 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2016 May 7 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2016 The Royal Society of Chemistry.
ASJC Scopus subject areas
- General Materials Science