This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).
|Number of pages||13|
|Journal||Progress in Photovoltaics: Research and Applications|
|Publication status||Published - 2023 May|
Bibliographical noteFunding Information:
This study was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP). Financial resources were received from the Ministry of Trade, Industry & Energy, Republic of Korea (20204010600470). Furthermore, the New & Renewable Energy Core Technology Program of the KETEP was granted financial support from the Ministry of Trade, Industry & Energy, Republic of Korea (20193020010390).
© 2022 John Wiley & Sons Ltd.
- boron-doped polysilicon
- crystalline silicon
- passivated emitter
- passivating contact
- solar cells
- spin-on doping
- tunnel oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Electrical and Electronic Engineering