Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

Hyun Jung Park; Jinsol Kim; Dongjin Choi; Sang Won Lee; Dongkyun Kang; Hae Seok Lee; Donghwan Kim; Munho Kim; Yoon Mook Kang

doi:10.1002/pip.3648

Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

Hyun Jung Park, Jinsol Kim, Dongjin Choi, Sang Won Lee, Dongkyun Kang, Hae Seok Lee, Donghwan Kim, Munho Kim, Yoon Mook Kang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This study focuses on boron-doped p⁺polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p⁺ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p⁺ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).

Original language	English
Pages (from-to)	461-473
Number of pages	13
Journal	Progress in Photovoltaics: Research and Applications
Volume	31
Issue number	5
DOIs	https://doi.org/10.1002/pip.3648
Publication status	Published - 2023 May

Bibliographical note

Funding Information:
This study was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP). Financial resources were received from the Ministry of Trade, Industry & Energy, Republic of Korea (20204010600470). Furthermore, the New & Renewable Energy Core Technology Program of the KETEP was granted financial support from the Ministry of Trade, Industry & Energy, Republic of Korea (20193020010390).

Publisher Copyright:
© 2022 John Wiley & Sons Ltd.

Keywords

boron-doped polysilicon
crystalline silicon
passivated emitter
passivating contact
solar cells
spin-on doping
tunnel oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pip.3648

Cite this

@article{353c431b3e9b4ce38a45f1ccd6d3f7e9,

title = "Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells",

abstract = "This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).",

keywords = "boron-doped polysilicon, crystalline silicon, passivated emitter, passivating contact, solar cells, spin-on doping, tunnel oxide",

author = "Park, {Hyun Jung} and Jinsol Kim and Dongjin Choi and Lee, {Sang Won} and Dongkyun Kang and Lee, {Hae Seok} and Donghwan Kim and Munho Kim and Kang, {Yoon Mook}",

note = "Funding Information: This study was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP). Financial resources were received from the Ministry of Trade, Industry & Energy, Republic of Korea (20204010600470). Furthermore, the New & Renewable Energy Core Technology Program of the KETEP was granted financial support from the Ministry of Trade, Industry & Energy, Republic of Korea (20193020010390). Publisher Copyright: {\textcopyright} 2022 John Wiley & Sons Ltd.",

year = "2023",

month = may,

doi = "10.1002/pip.3648",

language = "English",

volume = "31",

pages = "461--473",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "John Wiley and Sons Ltd",

number = "5",

}

TY - JOUR

T1 - Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

AU - Park, Hyun Jung

AU - Kim, Jinsol

AU - Choi, Dongjin

AU - Lee, Sang Won

AU - Kang, Dongkyun

AU - Lee, Hae Seok

AU - Kim, Donghwan

AU - Kim, Munho

AU - Kang, Yoon Mook

N1 - Funding Information: This study was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP). Financial resources were received from the Ministry of Trade, Industry & Energy, Republic of Korea (20204010600470). Furthermore, the New & Renewable Energy Core Technology Program of the KETEP was granted financial support from the Ministry of Trade, Industry & Energy, Republic of Korea (20193020010390). Publisher Copyright: © 2022 John Wiley & Sons Ltd.

PY - 2023/5

Y1 - 2023/5

N2 - This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).

AB - This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).

KW - boron-doped polysilicon

KW - crystalline silicon

KW - passivated emitter

KW - passivating contact

KW - solar cells

KW - spin-on doping

KW - tunnel oxide

UR - http://www.scopus.com/inward/record.url?scp=85142244991&partnerID=8YFLogxK

U2 - 10.1002/pip.3648

DO - 10.1002/pip.3648

M3 - Article

AN - SCOPUS:85142244991

SN - 1062-7995

VL - 31

SP - 461

EP - 473

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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