Bosonization theory of excitons in one-dimensional narrow-gap semiconductors

H. C. Lee; S. R. Eric Yang

doi:10.1103/PhysRevB.63.193308

Bosonization theory of excitons in one-dimensional narrow-gap semiconductors

H. C. Lee, S. R. Eric Yang

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Excitons in one-dimensional narrow-gap semiconductors of anticrossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a nonintegrable sine Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.63.193308
Publication status	Published - 2001 May 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.63.193308

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title = "Bosonization theory of excitons in one-dimensional narrow-gap semiconductors",

abstract = "Excitons in one-dimensional narrow-gap semiconductors of anticrossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a nonintegrable sine Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.",

author = "Lee, {H. C.} and {Eric Yang}, {S. R.}",

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AU - Eric Yang, S. R.

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N2 - Excitons in one-dimensional narrow-gap semiconductors of anticrossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a nonintegrable sine Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

AB - Excitons in one-dimensional narrow-gap semiconductors of anticrossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a nonintegrable sine Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

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DO - 10.1103/PhysRevB.63.193308

M3 - Article

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VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

ER -

Bosonization theory of excitons in one-dimensional narrow-gap semiconductors

Abstract

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