Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)