Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

Hyunsuk Kim; Kyoungah Cho; Dong Won Kim; Hye Ryoung Lee; Sangsig Kim

doi:10.1063/1.2364153

Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

Hyunsuk Kim, Kyoungah Cho, Dong Won Kim, Hye Ryoung Lee, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

Original language	English
Article number	173107
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364153
Publication status	Published - 2006

Bibliographical note

Funding Information:
This study was supported by the National Research Program for 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), the National Research Laboratory (M10500000045-05J0000-04510), the National R&D Project for Nano Science and Technology (10022916-2005-21), and the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2005-005-D00087).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2364153

Cite this

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title = "Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals",

abstract = "Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.",

author = "Hyunsuk Kim and Kyoungah Cho and Kim, {Dong Won} and Lee, {Hye Ryoung} and Sangsig Kim",

note = "Funding Information: This study was supported by the National Research Program for 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), the National Research Laboratory (M10500000045-05J0000-04510), the National R&D Project for Nano Science and Technology (10022916-2005-21), and the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2005-005-D00087). ",

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doi = "10.1063/1.2364153",

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journal = "Applied Physics Letters",

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AU - Kim, Hyunsuk

AU - Cho, Kyoungah

AU - Kim, Dong Won

AU - Lee, Hye Ryoung

AU - Kim, Sangsig

N1 - Funding Information: This study was supported by the National Research Program for 0.1 Terabit Non-Volatile Memory Development (10022965-2005-11), the National Research Laboratory (M10500000045-05J0000-04510), the National R&D Project for Nano Science and Technology (10022916-2005-21), and the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2005-005-D00087).

PY - 2006

Y1 - 2006

N2 - Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

AB - Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

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Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

Abstract

Bibliographical note

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