Abstract
Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.
Original language | English |
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Article number | 173107 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)